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Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate
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Spin-LED structure with a single InGaAs/GaAs QW. The CoFeB/ MgO/GaAs... | Download Scientific Diagram
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Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier - ScienceDirect
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